AON6411 20v p-channel mosfet v ds i d (at v gs = -10v) -85a r ds(on) (at v gs = -10v) < 2.1m w r ds(on) (at v gs =-4.5v) < 2.5m w r ds(on) (at v gs =-2.5v) < 3.6m w symbol v ds drain-source voltage -20 the AON6411 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted -20 g d s top view 1 2 3 4 8 7 6 5 v ds v gs i dm i as e as t j , t stg symbol t 10s steady-state steady-state r q jc parameter typ max t c =25c 7.3 62.5 t c =100c junction and storage temperature range -55 to 150 c/w r q ja 14 40 -340 17 thermal characteristics units maximum junction-to-ambient a a t a =25c pulsed drain current c continuous drain current g i d -85 -67 v 12 gate-source voltage drain-source voltage -20 c i dsm a t a =70c continuous drain current 245 -47 a 70 v t c =25c t c =100c w power dissipation a p dsm w t a =70c 156 4.7 t a =25c power dissipation b p d avalanche energy l=0.1mh c mj avalanche current c -38 maximum junction-to-case c/w c/w maximum junction-to-ambient a d 0.6 55 0.8 www.freescale.net.cn 1/6 general description features
symbol min typ max units bv dss -20 v v ds =-20v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -0.5 -0.85 -1.3 v i d(on) -340 a 1.7 2.1 t j =125c 2.45 3 2 2.5 m w 2.8 3.6 m w g fs 115 s v sd -0.57 -1 v i s -85 a c iss 10290 pf c oss 1910 pf c rss 1395 pf r g 2.1 4.2 w q g (10v) 235 330 nc q g (4.5v) 100 140 nc q gs 21 nc q gd 36 nc t 9 ns maximum body-diode continuous current g input capacitance output capacitance turn-on delaytime dynamic parameters reverse transfer capacitance v gs =0v, v ds =-10v, f=1mhz switching parameters gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =-10v, v ds =-10v, i d =-20a gate source charge gate drain charge total gate charge zero gate voltage drain current gate-body leakage current m w i s =-1a,v gs =0v v ds =-5v, i d =-20a v gs =-2.5v, i d =-20a forward transconductance diode forward voltage v gs =-4.5v, i d =-20a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-20a r ds(on) static drain-source on-resistance i dss m a v ds =v gs, i d =-250 m a v ds =0v, v gs =12v t d(on) 9 ns t r 18 ns t d(off) 282 ns t f 90 ns t rr 48 ns q rr 178 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. turn-on delaytime body diode reverse recovery charge i f =-20a, di/dt=500a/ m s turn-on rise time turn-off delaytime i f =-20a, di/dt=500a/ m s v gs =-10v, v ds =-10v, r l =0.5 w , r gen =3 w turn-off fall time body diode reverse recovery time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design, and the maximu m temperature of 150 c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c.maximum uis current limited by test equipment. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. www.freescale.net.cn 2/6 AON6411 20v p-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 20 40 60 80 100 0 0.5 1 1.5 2 2.5 3 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 1 2 3 4 5 0 5 10 15 20 25 30 r ds(on) (m w w w w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on - resistance vs. junction temperature v gs =-4.5v i d =-20a v gs =-10v i d =-20a v gs =-2.5v i d =-20a 25 c 125 c v ds =-5v v gs =-2.5v v gs =-10v 0 20 40 60 80 100 120 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-1.5v -2v -10v -2.5v -4.5v v gs =-4.5v 18 40 voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c figure 4: on - resistance vs. junction temperature (note e) 0 1 2 3 4 5 6 0 2 4 6 8 10 r ds(on) (m w w w w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =-20a 25 c 125 c www.freescale.net.cn 3/6 AON6411 20v p-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 2 4 6 8 10 0 50 100 150 200 250 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 0 5 10 15 20 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss 0 100 200 300 400 500 600 700 800 900 1000 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction - to - case c oss c rss v ds =-10v i d =-20a t j(max) =150 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 18 40 figure 10: single pulse power rating junction - to - case (note f) 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 9: maximum forward biased safe operating area (note f) r q jc =0.8 c/w www.freescale.net.cn 4/6 AON6411 20v p-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 50 100 150 200 0 25 50 75 100 125 150 power dissipation (w) t case (c) figure 13: power de-rating (note f) 0 20 40 60 80 100 0 25 50 75 100 125 150 current rating i d (a) t case ( c) 1 10 100 1000 10000 0.0001 0.01 1 100 10000 power (w) pulse width (s) t a =25 c 1 10 100 1000 1 10 100 1000 -i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (note c) t a =25 c t a =150 c t a =100 c t a =125 c 18 40 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t case ( c) figure 14: current de-rating (note f) pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) r q ja =55 c/w www.freescale.net.cn 5/6 AON6411 20v p-channel mosfet
vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v id vds unclamped inductive switching (uis) test circuit & waveforms vds l 2 e = 1/2 li ar ar bv vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) vdd vgs vgs rg dut vdc vgs id vgs - + bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i www.freescale.net.cn 6/6 AON6411 20v p-channel mosfet
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